vn2010l/BS107 siliconix p-38283erev. b, 15-aug-94 1 n-channel enhancement-mode mosfet transistors product summary part number v (br)dss min (v) r ds(on) max ( ) v gs(th) (v) i d (a) vn2010l 200 10 @ v gs = 4.5 v 0.8 to 1.8 0.19 BS107 200 28 @ v gs = 2.8 v 0.8 to 3 0.12 features benefits applications low on-resistance: 6 secondary breakdown free: 220 v low power/voltage driven low input and output leakage excellent thermal stability low offset voltage full-voltage operation easily driven without buffer low error voltage no high-temperature arun-awayo high-voltage drivers: relays, solenoids, lamps, hammers, displays, transistors, etc. telephone mute switches, ringer circuits power supply, converters motor control to-226aa (to-92) top view s d g 1 2 3 vn2010l to-92-18rm (to-18 lead form) top view d s g 1 2 3 BS107 absolute maximum ratings (t a = 25 c unless otherwise noted) parameter symbol vn2010l BS107 unit drain-source voltage v ds 200 200 v gate-source voltage v gs 30 25 v continuous drain current (t j = 150 c) t a = 25 c i d 0.19 0.12 continuous drain current (t j = 150 c) t a = 100 c i d 0.12 a pulsed drain current a i dm 0.8 power dissipation t a = 25 c p d 0.8 0.5 w power dissipation t a = 100 c p d 0.32 w maximum junction-to-ambient r thja 156 250 c/w operating junction and storage temperature range t j , t stg 55 to 150 c notes a. pulse width limited by maximum junction temperature. updates to this data sheet may be obtained via facsimile by calling siliconix faxback, 1-408-970-5600. please request faxback document #70215.
vn2010l/BS107 2 siliconix p-38283erev. b, 15-aug-94 specifications a limits vn2010l BS107 parameter symbol test conditions typ b min max min max unit static drain-source breakdown voltage v (br)dss v gs = 0 v, i d = 100 a 220 200 200 v gate-threshold voltage v gs(th) v ds = v gs , i d = 1 ma 1.2 0.8 1.8 0.8 3 v gate body leakage i gss v ds = 0 v, v gs = 20 v 10 na gate - body leakage i gss v ds = 0 v, v gs = 15 v 10 na drain leakage current i dsx v ds = 70 v, v gs = 0.2 v 1 v ds = 130 v, v gs = 0 v 0.03 a zero gate voltage drain current i dss v ds = 160 v, v gs = 0 v 1 a t j = 125 c 100 on-state drain current c i d(on) v ds = 10 v, v gs = 10 v 0.7 0.1 a v gs = 2.8 v, i d = 0.02 a 6 28 drain-source on-resistance c r ds(on) v gs = 4.5 v, i d = 0.05 a 6 10 t j = 125 c 11 20 forward transconductance c g fs v ds = 15 v, i d = 0.1 a 180 125 common source output conductance c g os v ds = 15 v, i d = 0.05 a 0.15 ms dynamic input capacitance c iss 35 60 output capacitance c oss v ds =25 v, v gs = 0 v, f = 1 mhz 9 30 pf reverse transfer capacitance c rss 1 15 switching d turn-on time t on 25
01
5 20 ns turn-off time t off 0 . 1
21 30 ns notes a. t a = 25 c unless otherwise noted. vndq20 b. for design aid only, not subject to production testing. c. pulse test: pw 300 s duty cycle 2%. d. switching time is essentially independent of operating temperature.
vn2010l/BS107 siliconix p-38283erev. b, 15-aug-94 3 typical characteristics (25 c unless otherwise noted) ohmic region characteristics output characteristics for low gate drive on-resistance vs. drain current normalized on-resistance vs. junction temperature transfer characteristics on-resistance vs. gate-to-source voltage v gs gate-source voltage (v) v gs gate-source voltage (v) drain current (ma) i d drain current (ma) i d drain current (a) i d on-resistance ( r ds(on) v ds drain-to-source voltage (v) v ds drain-to-source voltage (v) i d drain current (a) t j junction temperature ( c) r ds(on) drain-source on-resistance (normalized) 28 048121620 24 20 16 0 12 8 4 i d = 500 ma 50 ma t j = 25 c 250 ma 12.5 10.0 7.5 0 0 0.2 1.0 5.0 2.5 0.4 0.6 0.8 v gs = 10 v 0.5 0123 45 0.4 0.3 0.2 0.1 0 v gs = 10 v 5 v 4 v 3 v 2 v 6 v t j = 25 c 50 0 0.4 40 30 20 10 0 0.8 1.2 1.6 2.0 v gs = 2.2 v 2.0 v 1.8 v 1.6 v 1.4 v 0.6 v 1.2 v 1.0 v t j = 25 c 500 400 300 0 5 200 100 012 3 4 25 c 125 c v ds = 15 v t j = 55 c 2.25 2.00 1.75 0.50 50 10 150 1.50 1.25 30 70 110 1.00 0.75 v gs = 4.5 v i d = 50 ma 10 ma r ds(on) drain-source on-resistance (
vn2010l/BS107 4 siliconix p-38283erev. b, 15-aug-94 typical characteristics (25 c unless otherwise noted) (cont'd) threshold region capacitance normalized effective transient thermal impedance, junction-to-ambient (to-226aa) gate charge load condition effects on switching normalized effective transient thermal impedance t 1 square wave pulse duration (sec) i d drain current (a) v ds drain-to-source voltage (v) v gs gate-to-source voltage (v) q g total gate charge (pc) drain current (ma) i d c capacitance (pf) gate-to-source voltage (v) v gs 10 1 0.01 0 0.4 0.1 0.8 1.2 1.6 2.0 v ds = 5 v t j = 150 c 55 c 0 c 60 50 40 0 010 50 30 20 20 30 40 10 c oss c iss c rss v gs = 0 v f = 1 mhz 15.0 12.5 10.0 0 0 250 1250 7.5 5.0 500 750 1000 2.5 i d = 0.1 a 160 v v ds = 100 v 0.01 0.1 1.0 100 10 1 50 20 5 2 v dd = 25 v r g = 25 v gs = 0 to 10 v 10 k duty cycle = 0.5 0.2 0.1 0.05 0.02 single pulse 1 0.01 0.1 0.01 0.1 1 100 10 1 k 1. duty cycle, d = 2. per unit base = r thja = 156 c/w 3. t jm t a = p dm z thja (t) t 1 t 2 t 1 notes: p dm t 2 t d(off) t d(on) t r t f
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